Threshold Voltage Modeling of Carbon Nanotube Field-Effect Transistor (CNTFET)

Analytical modeling equations for characterizing the threshold voltage ($V_{th}$) of carbon nanotube field effect transistor CNTFETs are presented in this study With chirality. The equations have been derived based on the charge and potential distributions existing between the gate and substrate in a CNTFET. The research demonstrates a significant correlation between the chiral vectors of carbon nanotubes (CNTs) and their threshold voltage ($V_{th}$). The findings indicate a high level of coexistence between mathematical and visual simulation methodologies. The findings indicate that the determined threshold voltage ($V_{th}$) of a carbon nanotube field-effect transistor (CNTFET) possessing a chiral vector of (7, 2) exhibits a high degree of agreement with the relevant literature.