Additive Processed ZnO Transparent Vertical Field Effect Transistor

Transparent vertical field effect transistor is fabricated by additive process, using only spin-coating to deposit successive layers. The main purpose is to integrate driving transistor and OLED, minimizing the area of the pixel of a transparent display using the lowest cost process. After optimizing each constitutive layer, HfO
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layer as gate insulator, AuNWs network as non-continuous source and ZnO as semiconducting layer, full vertical ITO / HfO
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/ AuNWs / ZnO / AgNWs transistor is fabricated and characterized. The drain current is modulated by the gate voltage by more than 4 orders. The transparency of the full device is 85%.