Thermal Transport of Defect Graphene by Raman Spectroscopy

Understanding the effect of disorder on the relaxation dynamics of charge carriers is crucial for the operation of most graphene devices. Defect engineering is a valuable technique to modulate the properties of the material. Moreover, this requires a comprehensive understanding of the influence of the defects on graphene device proprieties. In this work, we obtain the Raman signatures of the distance between vacancies and their sizes. Several vacancies with different geometries were treated with various concentrations. The calculated Raman spectra show a Gband at $1588 \mathrm{~cm}^{-1}$ and a D-band around $1340 \mathrm{~cm}^{-1}$ as a characteristic band of defective graphene. The spectra also show other modes whose frequencies depend significantly on the density of vacancies. These modes can be a valuable index to estimate the average distance between the vacancies. Based on these findings, we may extract information about thermal transport.