Research on the Invisible Cutting Method of Silicon Carbide Using Femtosecond Laser

A new method for cutting silicon carbide wafers using a femtosecond laser has been proposed after studying the mechanism of action. The superiority of this method was established through a comparison with traditional molecular laser cutting on a test bench. The cutting speed and laser peak power were adjusted to determine the best parameters for cutting silicon carbide wafers using femtosecond pulse laser. Using this method can effectively reduce production costs, improve crystal cutting efficiency and quality, and has potential applications in hard and brittle crystal cutting.