Comparative Study of AlGaN/GaN-Based Polarization Junction Super HFET

The double-hetero GaN/AlGaN/GaN polarization junction (PJ) is a semiconductor structure designed to enhance the performance of RF (Radio Frequency) and power devices, primarily based on wide band gap materials like GaN (Gallium Nitride). By incorporating a GaN/ AlGaN/GaN structure, the device can create two-dimensional hole gas (2DHG) and two-dimensional electron gas (2DEG) at the upper and lower junctions, respectively. The PJ takes advantage of the inherent polarization properties of GaN and AlGaN materials. In AlGaN layer the Al composition is graded from 1% to 23% to improve the DC and RF characteristics. The composition grading improves the Gm by 37.6% and the output drain current by 51%. The cut-off frequency and maximum frequency also improve.