Comparison analysis of DG-MOSFET without Stack configurations using HfO2 and Al2O3 taking DNA as Biosensor applications

In this research, we investigated and related the effectiveness of two diverse setups for advanced DG MOSFET devices that can be applied as biosensors. We addressed the challenge of the short channel effect by employing a dielectrical modulation technique for label-free electrical detection of biomolecules such as protein, biotin, DNA, APTES. Both configurations utilized silicon as the channel material in the absence of a stacked model. Additionally, we evaluated the device's performance that has been analyzed based on various parameters, such as linearity, analog, sensitivity, and RF parameters, using DNA as the biomolecule in the cavity. The device structures were designed using Hf02 (with a dielectric constant of 25), Al2O3 (with a dielectric constant of 6.9), and SiO2 (with a dielectric constant of 3.9). The simulations were carried out using the 2D Sentrausu TCAD simulator, and the results were plotted using Origin Pro.