A 4kW, 100V GaN on SiC HEMT Transistor for 1.3GHz Particle Accelerator Applications

A 100V GaN on SiC HEMT device is reported that produces 4kW at 1.3 GHz with 75% efficiency and 18dB gain under 10μs 4% duty cycle pulse conditions for a specific particle accelerator design. For standard particle accelerators operating in CW conditions at this frequency, derating is required. This is believed to be the highest power yet achieved from a discrete transistor at this frequency.