InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz

In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are modeled in order to understand how parasitic parameters are distributed and to propose subsequent improvements.