A 365-410 GHz Push-Push Frequency Doubler with Driving Stage in SiGe BiCMOS

With recent advancements in SiGe BiCMOS technologies, HBTs with transit frequencies of 300GHz or more can be provided for circuit design. One of these is Infineon’s newest $90\mathrm{~nm}$ BiCMOS technology, providing HBTs with an $f_{t}/f_{\max}$ of $300\mathrm{GHz}/500\mathrm{GHz}$, respectively. To demonstrate its capabilities regarding high-frequency circuit design, this paper presents a $365\mathrm{GHz}-410\mathrm{GHz}$ push-push frequency doubler with driving stage and input balun. Measurements exhibit a maximum saturated output power of -7.8 dBm at 365GHz and a maximum conversion gain of $-2.8\mathrm{~dB}$.