A W-Band High Isolation SPDT Switch Using Reverse-saturated 0.13μm SiGe HBTs

This paper presents a SPDT switch using a 0.13 μm reverse-saturated SiGe HBTs. The performance of the insertion loss and isolation are improved by a proposed two-shunt configuration and a shunt inductance between the collector and emitter of the transistor , respectively. A simulated insertion loss of 1.9-2 dB is achieved at 92-96 GHz. The simulated output port isolation is > 34dB at 75-100 GHz. The return loss is higher than 15 dB at 92-98 GHz. Simulation shows an 1 dB compression point of 16 dBm at 94 GHz.