Impact of layout and channel processing on CMOS low frequency noise variability

An investigation about Low Voltage CMOS (LVCMOS) flicker noise (FN) variability and Random Telegraph Noise (RTN) occurrence, including the impact of geometric parameters (channel Width, Length and number of gates, NG), Source/Drain pocket implant and layout solutions, has been carried out, focusing on Smart Power Technology 1.8V Nch transistors used in analog applications.