Design Consideration and Demonstration of Dual-Active Bridge Converter Using 13-kV SiC-MOSFETs Packaged in TO-268

This paper discusses the feasibility of power electronic converters using high voltage SiC-MOSFETs with a TO-package for medium voltage applications. Characteristics of a 13-kV SiC-MOSFET packaged in TO268 are reported. Design of dual active bridge (DAB) converters with the devices is discussed. A DAB converter, which has 16.7 kW of power rating with 7.2 kV of the primary side voltage and 380 V of the secondary side voltage, is designed and was fabricated. Power loss characteristics are analyzed and were verified by experimental demonstrations.