The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations

In this paper, the characteristics of dI
D
/dt, dV
DS
/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.