Analytical Estimation of Parasitic Ringing Overvoltage in Fast Switching Half-Bridges

Modern wide bandgap power devices promise higher power conversion performance if the device can be operated reliably. As switching speed increases, the effects of parasitic ringing become more prominent, causing potentially damaging overvoltages during device turn-off. Estimating the expected additional voltage caused by such ringing enables more reliable designs. In this paper, we present an analytical expression to calculate the expected overvoltage caused by parasitic ringing based on parasitic element values and operating point parameters. Simulations and measurements confirm that the expression can be used to find the smallest rise time of the switches’ drain-source voltage for minimum overvoltage. The given expression also allows the prediction of the trade off overvoltage amplitude in case of faster required rise times.