Performance Analysis of GaN Inverter fed Electric Traction Drive System for EV Application

In this paper, the performance analysis of Wide Band Gap (WBG) device made of Gallium Nitride (GaN) is analyzed in depth for its implementation in electric traction drive system employing the Maximum Torque per Ampere Control (MTPA) as a method of speed control for controlling the Interior Permanent Magnet Synchronous Machine (IPMSM). The GaN based HEMT devices are employed in the inverter design to implement the MTPA speed control, and the inverter’s complete loss analysis were performed using MATLAB Simulink and PLECS. In this work, MTPA control is used instead of Zero d-axis control because it reduces current while producing the same torque as ZDAC control. Furthermore, to reduce losses, a low loss GaN inverter is used, making the overall control method a highly efficient method for use in EVs. Complete loss analysis was performed using PLECS software, and it was found that GaN-based inverters have lower losses than Silicon carbide (SiC) inverters and Silicon inverters.