A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs

In this paper, the effect of applying voltge during irradiation is discussed. Gamma ray results in a significant amount of positive charges residue in the oxide of MOS structure devices. PMOSFET has higher $\Delta \mathrm{V}_{\mathrm{t}\mathrm{h}}$ than NMOSFET because of interface state charges type. The difference can also be observed on the VTC of CMOS inverters.