Accurate CMOS Active Resistor with Increased Linearity

A new CMOS active resistor structure is submitted. This new proposed symmetrical structure offers the possibility to obtain a strong improvement of the main circuit performances, as compared to the classical similar designs. This circuit current-voltage characteristic is very linear and the domain of the differential input voltage allowed by the circuit is very large, for obtaining this excellent linearity. As a result of the biasing in saturation of all MOS active devices, frequency response of the new proposed structure will be strongly increased. This original circuit allows a very important diminution of the circuit area as compared to physical resistors, accurately simulating the Ohm law for the equivalent resistances up to megaohms. The SPICE simulations validate the theoretical approach, showing a very good linearity, a large domain of the input voltage also a very good frequency response.