Ambient Dependent Degradation Behavior of Flexible Poly-Si TFTs Under Dynamic Stretch Stress

Degradation behavior of flexible low-temperature polysilicon thin-film transistors (LTPS TFTs) under dynamic stretch stress is studied in controlled ambient. In this work, the correlation between dynamic stretch degradation and ambient is observed for the first time. The degradation behavior in inert gas Ar is not consistent with that observed in air, and H
2
O in ambient is the key factor causing to the degradation of TFTs. The study of ambient dependent degradation behavior under dynamic stretch is of great significance for TFTs reliability evaluation.