Study on the Structure and Characteristics of a Novel Semi-SJSGT

In this paper, a novel semi-SJSGT structure is proposed to optimize the static and dynamic characteristics of the device by combining the structural characteristics of SJMOSFET and SGT-MOSFET. The results show that compared with Con.SGT, the breakdown voltage of the novel semi-SJSGT is increased by 15.8%, and the on-resistance is reduced by 29.9%. Compared with Con.TrenchSJ, the gate charge of the novel semi-SJSGT is decreased by 27.5%, and the gate to drain charge is decreased by 31.2%. In order to further reduce the process difficulty of semi-SJSGT, the Dif.semi-SJSGT structure is proposed. At the same time, in order to further reduce the on-resistance of semi-SJSGT, the NFD.semi-SJSGT structure is proposed. Compared with semi-SJSGT, the on-resistance of NFD.semi-SJSGT is reduced by 1.9%.