Thermal Analysis Model Inside MOSFETs Under HPEMPs Based on the Thermal Flux Boundary Condition

On the foundation of the previous research on the thermal failure process, a new thermal analysis model based on the thermal flux boundary condition is derived theoretically in this article. Equations derived based on the thermal flux BC are provided. Results obtained from the theoretical model are compared with the numerical simulation results obtained from the numerical software. The comparison shows that the analysis results of the thermal model based on thermal flux BC are in good agreement with the numerical simulation results. At the same time, the results also agrees well with the results obtained based on the first type BC which used in previous work. The correctness of this model is verified through the comparisons. This analysis model is useful for further failure estimating of MOSFETs and other devices under HPEMP.