A Broadband 29 dBm GaAs pHEMT Power Amplifier with High Gain

Design and realization of a broadband high gain 29dBm power amplifier is presented in this article. The proposed design approach utilizes a unique combination of FET stacking to enhance unit cell power output with broadband power amplification using Non-Uniform distributed topology on GaAs pHEMT technology. Addition of feedback based driving stages helps in increase of the overall small signal gain. The resulting power amplifier gives small signal gain of 31 dB over 5-18 GHz bandwidth and delivers more than 29 dBm saturated output power when operated with 8V drain supply while consuming a total current of 600 mA.