Broadband Low Noise Amplifier Design For Optimal Noise and Impedance Matching

This paper presents the design of a 1-10GHz broadband multistage monolithic microwave integrated circuit low noise amplifier using 250nm GaAs pseudo-morphic high electron mobility transistor process of UMS foundry. Shunt negative feedback and inductive source degeneration techniques are used simultaneously to achieve wideband gain response, low noise along with good impedance matching over the entire band. Simulation results show 2.3dB noise figure, average gain of 17dB, return loss better than 12dB, and output 1 dB compression of 14-10 dBm over the entire 1-10GHz frequency band. The LNA is realized within the footprint of 1.7x2.7x0.1 mm
³
and consumes only 198mW of power.