Hafnium-Based Ferroelectric Memory Device With Integrated Selective Function Using Crested Band Structure

Ferroelectric tunneling junctions (FTJs) are promising candidates for nonvolatile and highly integrated ferroelectric storage devices. This article proposes an effective way to enhance the nonlinearity ratio by constructing a crested energy band structure using TiO2 in HfO2-based FTJ devices. Our device exhibits a reduced coercive electric field by approximately 1 MV/cm compared to reference devices, while the residual polarization is increased by
${10}~\mu \text{C}$
/cm2. The pulse test of the device reveals that significant switching effect occurs when the write electric field is above 1.5 MV/cm. A significant improvement in the nonlinearity of the devices can be observed, which is approximately 20 times higher than that of reference devices and simulations display that our devices greatly improve the crosstalk issues. These results pave the way for developing high-density memory integrated FTJ arrays and addressing crosstalk issues.