Zn(O,S) Buffer Layer Optimization for CuInGa(S,Se)2 Solar Cells based on Sulfide Nanoparticles Ink

The mainstream CuInGa(S,Se)
2
(CIGSSe) solar cells are prepared based on vacuum method and CdS buffer layer. Considering the cost and environmental issues, the preparation of absorber layer based on non-vacuum route with nanoparticle ink and the realization of CdS-free buffer layer is of great importance for large-scale industrialization. Herein, we prepared a Cd-free CIGSSe solar cell with an power conversion efficiency of 6.22% by optimizing the concentration of the reaction solution in chemical bath deposition using a high-quality nanoparticle ink for the absorber layer and Zn(O,S) as the buffer layer; for comparison, the champion CIGSSe solar cell with a PCE of 10.96% based on the CdS buffer layer (without antireflective film).