Solution Processable Mos2 Based Memristive Synapse for Brain Inspired Computing

As a novel 2D material, MoS
2
has shown excellent electrical properties and resistive switching characteristics to work as a switching layer for non-volatile memory. In this work, we drop cast the MoS
2
solution to prepare the thin film and deposit an interfacial layer of Al
2
O
3
. We demonstrate the proposed memristive device with Cu/Al
2
O
3
/MoS
2
/Pt structure to work as an artificial synapse. The device shows a steady resistive switching behavior with the SET and RESET voltages of 1.3 V and -0.5 V, respectively. We further demonstrate the synapse behavior via a Hopfield Neural Network (HNN) and achieve image recognition and reconstruction with a high accuracy of 96% after 15 training epochs.