Dielectric Material-Assisted Optical Tamm Mode Localization for Enhanced Photonic Spin Hall Effect

A dielectric material-aided excitation technique is presented in this research to confine optical Tamm mode (OTM) for enhanced photonic spin hall effect (PSHE) generation. The design comprises a bilayer photonic crystal (PhC) structure having a top defect layer. The structural dispersion analysis is carried out to validate the localization of the OTM and the generation of corresponding PSHE. Further, the impact of incidence angle and operating wavelength is also investigated towards enhancing PSHE. With an optimized defect layer thickness of 220 nm, the proposed structure exhibits substantial OTM confinement. Finally, a maximum transverse displacement of ≈ λ/2 at an incidence angle of 46.944° is reported.