Atomic Layer Deposition of Perpendicularly Magnetized Co Layers Showing Current-induced Domain Wall Motion

Successful preparation of perpendicularly magnetized Co thin layers on Pt seed-layers using atomic layer deposition (ALD) technique with Co(PF
3
)
4
H as a precursor is reported. The residual phosphorus content in the samples, due to low deposition temperatures to realize ALD, was reduced effectively by tuning ALD parameters. Spin-orbit-torque driven current-induced domain wall motion was observed in the strip containing ALD Co layer prepared with the low phosphorus condition.