High-performance Type-y Spin-orbit Torque MRAM Devices

We demonstrated in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices capable of low switching current density, fast speed, high reliability and most importantly, manufactured uniformly by the 200 mm-wafer platform. The SOT-MTJ devices are integrated on 200 m-wafers using two-metal-layers back-end-of-line (BEOL) process. The performances of the devices are systematically studied, including magnetic properties, endurance, data retention and switching dynamic of the devices. Specifically, the devices exhibit low critical switching current density J
C
~160 MA/cm
²
at 0.3 ns, high tunneling magnetoresistance (TMR) ratios exceeding 100%, ultra-high endurance over 10
¹²
cycles, and excellent thermal stability Eb > 100 k
B
T. The research provides flexible solutions for high-speed and energy efficient memory applications. As a prospective, it is expected to obtain excellent performance of the devices through further optimizing the MTJ film stacks and corresponding fabrication processes.