The Study on the Optimization and Electrical Behavior of NEDMOS Transistors for High-Voltage Power Applications

For the application of high voltage $(\gt 40\mathrm{V})$ power supply, the optimization of electrical characteristics of extended drain metal oxide semiconductor field-effect transistors (EDMOS) is systematically studied. The key dimensions and doping conditions of 40V N-channel EDMOS (NEDMOS) are optimized through practical tests, computer optimization program, TCAD simulation and silicon experiment to achieve the target of electrical characteristics.