Study on the Slurry for Chemical Mechanical Polishing of Sapphire Wafer

The effect of $\mathrm{A}1_{2}\mathrm{O}_{3}$ polishing slurry on sapphire wafer CMP has been studied in this paper. It is found that a high material removal rate (MRR) can be achieved with this low weight concentration $\mathrm{A}1_{2}\mathrm{O}_{3}$-based slurry. By changing the particle size of the alumina abrasive, the MRR of sapphire was improved. The experimental results show that when the mean diameter of $\mathrm{A}1_{2}\mathrm{O}_{3}$-based slurry is about 500 nm, the MRR can reach 5.1 $\mu \mathrm{m}/\mathrm{h}$.