Influence of Ion Implantation on Void Defect Formation in Epitaxially Grown Silicon

Nowadays, silicon epitaxy process is widely used in the manufacturing of high voltage BCD chips. As a result, void defects in epitaxial layer have attracted growing interests of researchers in the semiconductor fabrication. In this paper, we reported one kind of void defect along a straight line in silicon epitaxial layer and proposed a possible formation mechanism. It is found that there is a strong correlation between the lattice damage in antimony implant process and the occurrence of the void defect. Furthermore, a solution to prevent void defects formation is also discussed and provided.