Optimization of the hybrid-switch inverter by decoupling SiC and Si

The main objective of this paper is to optimize the overall power losses of a traction inverter operating at a DC-link voltage of 400V by using a discrete 650V Si-IGBT and freewheeling diode and a 650V SiC-MOSFET in parallel. The study proposes a new approach to decouple the SiC-MOSFET half bridge and the IGBT/Si-Diode half bridge from each other using a small additional inductance. This approach reduces the turn-on losses of the SiC-MOSFET and turn-off losses of the Si-Diode, resulting in lower overall losses in the hybrid-switch inverter compared to a non-decoupled configuration. The system losses of the hybrid-switch inverter are simulated and validated through both a double pulse test setup and an inverter test rig.