Behavioral I-V Model for Nanometer MOSFETs

A new compact analytical current-voltage (I-V) model for nano-scale MOS transistor is developed based on curve-fitting. It is characterized by the use of 5 parameters only and this number might be even limited. It allows for both hand calculations under some simplifications and numerical computations. It works in strong and moderate inversion regions. The methodology of parameters extraction is presented for the two approaches - hand and numerical solutions. The accuracy of the model is compared to the simulation results in PTM 32nm technology.