Analytical Approach for Losses in Differential Amplifier Using Double-Gate MOSFET

This research work entails designing and analyzing a differential amplifier that utilizes BF988 Double-Gate (DG) MOSFET. Different parameters have been analyzed to observe the performance of the amplifier. The active load has been used instead of the resistive load to improve the differential gain of the system significantly. The simulated results of differential gain, switching losses, conduction losses, and total power losses were obtained as 15.85 V/V, 0.1 μW, 85.8 mW, and 1.73 W, respectively. From these results, the proposed amplifier is suitable for RF applications, input stages of the operational amplifier, medical measuring instruments, etc.