Electron Emission Characteristics of Field Emitter Arrays Coated with Over-Stoichiometric Hafnium Nitride

Field emitter arrays (FEAs) were fabricated with over-stoichiometric hafnium nitride (HfN
1+x
) thin films. Nitrogen compositions and oxygen impurities of the thin films were evaluated by backscattering spectrometry, and crystal structures by X-ray diffraction. Electron emission characteristics of the FEAs with HfN
1+x
were compared with those of FEAs with stoichiometric HfN. The emission currents of the FEAs with HfN
1+x
were lower than those of the FEAs with HfN at the same voltage. Emission currents of both FEAs showed gradual decrease in continuous emission test after 15 hours