Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

A 5-nm-thick HfO
2
anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of
$2.1\times 10^{8}$
at a low read voltage (V
read
) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO
2
OTP memory shows a robust 25°C retention with an extremely stable pulsed MW
$> 2\times 10^{8}$
after 10
⁷
s. From the pulsed characteristics and reliability viewpoints, the HfO
2
OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).