A Resistorless Precision Curvature-Compensated Bandgap Voltage Reference Based on the VGO Extraction Technique

This paper presents a resistorless curvature-compensated bandgap voltage reference (BGR). The proposed method, using ratioed transistors and the inverse function technique, attempts to extract V
GO
, the bandgap voltage of silicon, by canceling out both the T and TlnT terms in the temperature characteristic of the bipolar junction transistor's (BJT) base-emitter voltage, V
BE
. The proposed design is implemented in the TSMC 180nm process. Simulation results show that the circuit can achieve temperature coefficients (TC) of less than 4.7ppm/°C from −20°C to 80°C over process variation and mismatch.