Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs

GaN has attracted attention as a semiconductor material for next-generation power switching devices. Vertical-type GaN devices with MOS gate driving are preferable for high-power switching applications. Due to recent advances in bulk GaN crystal growth [1], more studies are reporting vertical-type GaN devices with a breakdown voltage exceeding 1 kV on GaN substrates [2, 3]. However, these reports use an epitaxially grown p-type layer or fin-structure.