Four-Level Half-Bridge Power Module Package

Compared with the existing two-level and three-level converters, four-level converters have the advantages of lower dv/dt and lower switching losses. Taking a four-level dual T -type converter as an example, six different topology configurations are developed using different combination of IGBT and SiC MOSFET semiconductor devices. Subsequently, three 4L-DT half-bridge power module package schemes with 1200V/100A are proposed and discussed in this article. With the help of vertical flux cancellation and horizontal flux cancellation, the three commutation loop inductances of each package scheme can be kept at low values. Simulations have been done based on Ansys/Q3D to verify the proposed power module package schemes.