A Reliable Packaging Design for 1200-V, 500-A SiC Half-bridge Modules with Junction Temperature over 200 °C

This paper presents a reliable packaging design for high-temperature SIC power modules. The packaging materials used in this package are able to maintain excellent mechanical and electrical characteristics at a temperature of at least 200°C. This is a necessary condition for the modules to be able to be used at high temperatures for a long time. The package also uses many advanced packaging processes, such as pressed silver sintering and ultrasonic soldering. These processes not only improve the reliability of the interconnect, but also improve the electrical and thermal conductivity at the soldered joints. On the basis of the processes and materials, the researchers expanded the effective heat dissipation area on the substrate by expanding the chip spacing to weaken the cross thermal coupling effect between the chips during operation. To verify the effectiveness of this measure, the researchers proposed two chip layout solutions, A and B, and simulated the thermal distribution on the substrate surface using finite element simulation tools. The simulation results prove that the measure can significantly reduce the chip temperature. In addition to temperature, the substrate layout also takes into account stress and parasitic parameters. Eventually, the researchers assembled and tested the modules, and the testing results showed that the modules could operate at a temperature of at least 200°C for a long time.