Fabrication of Junction Field-Effect Transistors on a Flexible Substrate by Using Hydrogenated Amorphous Silicon

In this work, we report on the fabrication and electrical characterization of junction field-effect transistors (JFETs) on flexible substrates for analogue electronics. The JFETs were realized using hydrogenated amorphous silicon (a-Si:H) as the semiconductor active material and a polyimide film as the flexible substrate. The devices were fabricated by using standard microelectronic technologies. The electrical characterization of the JFETs shows that the devices exhibit good performance in terms of output characteristics, making them suitable for the realization of low-power analog circuits.