A Fast-Response Reference Current Source for High- and Low-Side High-Voltage Current Mirrors for Gate-Shaping Digital Gate Drivers

This paper presents the design of a fast-response reference current $(I_{FRR})$ source being the reference for the high-voltage output current sources of a gate shaping digital gate driver for Silicon-Carbide power MOSFETs. By shaping the switching waveform driving the power MOSFET, there are significant improvements regarding energy efficiency and electromagnetic compatibility obtainable. The maximum reference current for the output current mirrors of the gate driver is 44.7mA with a total output current of 5.6A. A maximum startup time of less than 50ns over process and mismatch variations and the full temperature range of $-40mA^{\circ}{C}$ to from $150^{\circ}C$ is achieved. The total current consumption is {4.12mA from 5V with a reference current of 44.7mA from 20V while operating. The turn-off current consumption is 0 mA from 20 V and the standby current consumption is 9.27mA respectively.