Effects of the Electrical Polarizations on the Thermal Response of FinFET Nanotransistors

FinFET is the result of MOSFET miniaturization. Because of this technology, thermal effects have appeared, on which we have focused. Significantly, phonon transport in semiconductor materials is a crucial problem. However, this miniaturization includes several issues, such as SCE short-channel effects. The challenge for nanoscale transistors is to reduce these parasitic effects to increase the switching speed of a logic gate. This paper presents a comprehensive study of the gate length effects on the electrothermal response of FinFETs. In addition, the work shows the simulation of a 20 nm and 10 nm FinFET device. Finally, the paper discusses an electrothermal model utilized for describing the operation of FinFET devices in different dimensions using numerical simulation. In this paper, we present the investigation of self-heating effect (SHE) characteristics in FinFETs through the COMSOL simulation. The calibration is performed by fitting the
$I_{D}-V_{D}$
curve based on the experimental data.