Integration of high bandwidth material engineering in the development of a futuristic gate FET: A Comparison study

The research paper deals with the comparative study of material and gate-engineered grooved/recessed gate structure, recessed gate symmetrical double field effect transistor (RDG FinFET), and conventional FinFET. The Fin is designed for 8nm height, and the gates for 8nm depth. The comparison process includes the fundamental parameter matrices like input characteristics (I
d
vs. V
g
), Transconductance (g
m
), and threshold voltage (V
th
), along with some sophisticated simulated observations. To obtain the optimized result, the fin height is varied from 0nm to 17nm for Si FinFET.The wide band gap material like Gallium Nitride(GaN) is applied and designed in the structures and compared with respective Silicon(Si) structures. A comparison study is executed among the structures with Si as a semiconductor and the structures with GaN as a semiconductor. The parameters of analysis for the study are electric field, drain current, electron density, threshold voltage, and Transconductance. The GaN-based FinFET with 8nm fin height is a better-performing device (I
d
=3.52mA) than the grooved/ recessed gate structure (I
d
=5.97μA) and recessed double gate structure (I
d
=1.35mA), but in terms of the electric field, GaN recessed double gate exhibits maximum field strength. The obtained characteristics are analyzed and compared using the Visual TCAD device simulator.