TCAD-Based Analysis of Nanosheet and Forksheet FET Electrical Characteristics in the Presence of Gamma and Heavy Ion Radiation

In this article, we have studied the effects of gamma and heavy ion radiation on 5nm stacked nanosheet FET and Fork-sheet FET and analyzed the impact of radiation on circuitlevel characteristics. These analyses are carried out by using Three-Dimensional Technology Computer-Aided Design (3-D TCAD) simulations. By exposing gamma rays and heavy ion, the performance in terms of charge generation rate of nanosheet FET and Fork-sheet are investigated. Gamma particle and heavy-ion impacts are studied at the device and circuit levels. The results of Fork-sheet FET are compared with the results of gate-all-around nanosheet FET. After comparison, we found that radiation has a stronger influence on Fork-sheet than Nanosheet.