Investigation of the Direct Source to Drain Tunneling in 5 nm Nanotube Junctionless Field Effect Transistor

In this paper, The performance of a nanotube (NT) junctionless field effect transistor (JLFET) is studied in the sub-5 nm range. We demonstrate the effect of quantum confinement effects which leads to direct source to drain tunneling in the 5nm NT JLFET. Lateral band to band tunneling(L-BTBT) along with Direct source to drain tunneling which affects the OFF state performance of the device is also studied in this paper. The inclusion of high dielectric(high-k) spacers and the core gate to the device improve the performance. Lastly we have shown the effect of diameter of core gate on the device and inclusion of the hetero structures such Si-Ge also helps in achieving better performance in the device.