Performance Investigation of Inverted T-shaped Heterojunction FinFET along with Oxide Stacking.

The performance of the newly proposed inverted T-shaped heterojunction FinFET ($\perp$-FinFET) with the concept of oxide stacking (L-FinFET_OS) is discussed and compared with conventional inverted T-shaped heterojunction FinFET. The proposed device has been evaluated based on several important performance parameters, including ON current, OFF current, current ratio (ON/OFF), subthreshold slope, transconductance, threshold voltage, and drain-induced barrier lowering. The results of this analysis demonstrate that the device performs well across all of these parameters. It is observed that in the proposed oxide stacking structure, OFF current is lower than conventional $\perp$-FinFET. The SS and DIBL of the proposed device are found to be $86.48 \mathrm{mV} /$ decade and $17.2 \mathrm{mV} / \mathrm{V}$ respectively. The SS and DIBL are lowered down by 12.67 % and 29.2 % respectively in the proposed oxide stacking device. In addition, the contour plots are also presented in the paper to visualize the electron density present in the device during the OFF state. The temperature variation in the proposed device $(\perp-$ FinFET_OS) is also presented in the paper. It has been observed that as the temperature increases, the carriers become energetic and hence increase the leakage current. In this study, the performance parameters of the proposed device were compared with the results reported in previous literature. The analysis revealed that the proposed device outperformed the previous results in several key areas. As per the analysis based on detailed simulation results on the newly proposed device, will be more suitable for the biomedical-based application as it required small and low power circuitry.