Enhancing the Performance of Electrostatically Doped Double POLO PERC Solar Cell through Metal Silicides

Passivated emitter and rear cell (PERC) solar cell technology has garnered significant attention in the photovoltaic (PV) industry due to its ability to enable mass production with minimal losses. However, contact recombination losses remain a limiting factor for device performance. To mitigate these losses, a double-POLO (polysilicon on oxide) contact approach utilizing polysilicon on oxide is employed to serve as passivating contacts. As part of this study, a PERC device by using double POLO is designed through Silvaco-TCAD simulator. Additionally, another technique i.e., electrostatically doping (ED) is used as an alternative to physical-doping without poly-Si layer. Further, this proposed study investigates the influence of metal silicides on rear surface viz $\operatorname{ErSi}_{0.25}(3 \mathrm{eV}), \mathrm{Ti}_{5} \mathrm{Si}_{3}(3.71 \mathrm{eV}), \mathrm{YbSi}_{2}(3.95$ eV) on front surface and ErSi ${}^{1}.7(5.4 \mathrm{eV}), \mathrm{WSi}_{2}$ (5.2 eV), Pt
2
Si $(5.17 \mathrm{eV})$. To evaluate the proposed device, various $P V$ parameters, J-V curve and EQE curve are analyzed. The results indicate that optimized metal silicides with low WF of ErSi $0_{0.25}(3 \mathrm{eV})$ on the front surface and for rear side, high WF of $\mathrm{ErSi}_{1.7}(5.4 \mathrm{eV})$ lead to superior performance. The proposed device achieved optimized higher $P V$ parameters viz. $J_{S C}(41.02$ $\left.\mathrm{mA} / \mathrm{cm}^{2}\right)$, Voc $(0.735 \mathrm{~V})$, FF (80.73 %), and PCE(24.34 %). These results demonstrate the potential of silicide-based double-POLO devices and can serve as a foundation for future advancements in the performance of PERC device.