Gate Modulated Graphene Channel TFET with Enhanced Switching Current Ratio

A single gate modulated graphene channel TFET (GMGCTFET) is proposed. The proposed work is compared with conventional graphene channel TFET (GCTFET) and existing $\mathrm{SiGe}/\mathrm{Si}$ TFET. On current ($I_{ON})$, Off current(Ioff), Ambipolar current (I $\mathrm{IMB}_{\mathrm{AM}}$), IoN/Ioff ratio, IoN/I I
AMB
ratio and subthreshold swing of the device is resulted as $1.07\times 10^{-5}\mathrm{~A}/\mu\mathrm{m},1.06\times 10^{-15}\mathrm{~A}/\mu\mathrm{m},5.29\times 10^{-17}\mathrm{~A}/\mu\mathrm{m},1.009\times 10^{10},\ 2.02\times 10^{11}$ and $38.107\mathrm{mV}/$ decade respectively. The proposed device shows one decade improvement in IoN/Ioff ratio and two decade improvement in $I_{0N}/I_{AMB}$ ratio as compared to existing SiGe/Si TFET and also have three decade improvement in IoN/Ioff ratio as compared to GCTFET.