Demonstration of L-Channel Tunnel FET with Triple Metal Gate for Next Generation IC Technology

An L-Channel Tunnel FET with triple-metal gate is proposed and demonstrated for the first time in this paper. The usage of low bandgap material such as germanium as source and triple-metal gate with different workfunction are observed to extremely improve the device performance by increasing ON-State current to 1.09 x 1$0^{-4}A/\mu$m and decreasing OFF-State current to 3.17x 1$0^{-14}$A/$\mu$m. The difference in the metal workfunction at different gate position also reduces the ambipolarity in the device up to 2.3 x 1$0^{-15}$A/$\mu$m owing to variation in band-to-band tunneling (BTBT) rate at channel/drain interface.